Investigation into SiO2 Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled
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DOI: 10.3390/nano12244457
Abstract: SiO2 etching characteristics were investigated in detail. Patterned SiO2 was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases. Through plasma diagnostic techniques, plasma parameters (radical and… read more here.
Keywords: fluorocarbon; capacitively coupled; ion flux; sio2 etching ... See more keywords