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Effect of SiO2 hexagonal pattern on the crystal and optical properties of epitaxial lateral overgrown semipolar (11-22) GaN film

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Published in 2017 at "Microelectronic Engineering"

DOI: 10.1016/j.mee.2016.10.017

Abstract: Abstract We studied the optical and crystal properties of semipolar (11-22) hexagonal epitaxial lateral overgrown (HELO) GaN films with different SiO2 hexagonal pattern widths (6–15 μm). With increasing SiO2 hexagonal pattern width, it was difficult to… read more here.

Keywords: gan film; pattern; pattern width; hexagonal pattern ... See more keywords