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Published in 2019 at "Indian Journal of Physics"
DOI: 10.1007/s12648-019-01535-2
Abstract: In this paper, we have developed an analytical drain current model of stacked oxide SiO2/HfO2 cylindrical gate tunnel field-effect transistor (CG TFET) by considering the effect of interface trap charge at Si–SiO2 interface nearby the…
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Keywords:
oxide sio2;
model;
sio2 hfo2;
stacked oxide ... See more keywords
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Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.02.177
Abstract: Abstract We report the band alignment of SiO2 and HfO2 with (AlxGa1-x)2O3 (0 ≤ x ≤ 0.53) film utilizing the high resolution X-ray photoelectron spectroscopy (XPS) measurements. (AlxGa1-x)2O3 film were epitaxially grown on sapphire with Ga2O3 buffer layer. The…
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Keywords:
alxga1 2o3;
band;
band alignment;
2o3 film ... See more keywords
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Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4978357
Abstract: A significant degradation of the mobility has been repeatedly observed at low inversion density in high-κ/metal gate metal-oxide-semiconductor field-effect transistors. However, the scattering mechanisms responsible for this degradation are still debated. It is often assumed…
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Keywords:
carrier scattering;
metal;
sio2 hfo2;
metal gate ... See more keywords
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Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12213739
Abstract: Multilayering of optical thin films is widely used for a range of purposes in photonic technology, but the development of nanofiber structures that can outperform thin films and nanoparticles in optical applications cannot simply be…
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Keywords:
multilayer;
tm3 doped;
doped sio2;
sio2 hfo2 ... See more keywords