Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO2 Interface
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202400751
Abstract: Si/SiO2 interfaces, important parts of Si‐based devices, significantly influence the performance of Si‐based devices. However, owing to the impact of the external environment, related defects are generated, and the dopant can diffuse and redistribute, causing… read more here.
Keywords: sio2 interface; dopant diffusion; center defects; interface ... See more keywords
Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells
Sign Up to like & getrecommendations! Published in 2020 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2020.110649
Abstract: Abstract The Si–SiO2 interface has and will continue to play a major role in the development of silicon photovoltaic devices. This work presents a detailed examination of how charge at or near this interface influences… read more here.
Keywords: recombination; surface; charge; effect ... See more keywords
Chemical state of phosphorous at the SiC/SiO2 interface
Sign Up to like & getrecommendations! Published in 2019 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2019.02.038
Abstract: Abstract The chemical nature of sub-monolayer phosphorous impurities at the SiC/SiO2 interface is a critical surface science problem related to device performance and other applications. In this study, SiO2 films containing phosphorus were deposited by… read more here.
Keywords: sio2 interface; sic sio2; state phosphorous; phosphorus ... See more keywords
Oxygen Impurity-Tuned Structure and Adhesion Properties of the Cu/SiO2 Interface.
Sign Up to like & getrecommendations! Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.4c03418
Abstract: The properties of the Cu/SiO2 interface usually deteriorate in the complex atmospheric environment, which may limit its performance and application in the engineering. Using the reactive molecular dynamics method, we investigate how the mechanical behaviors… read more here.
Keywords: sio2 interface; oxygen; structure; adhesion properties ... See more keywords
Thermally and Electrically Regulated Plasmonic Devices Based on VO2-Covered Gold Nanoplate Arrays with SiO2 Interface Layer for Large Plasmon Shifts.
Sign Up to like & getrecommendations! Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.4c13712
Abstract: Integrating metal nanoparticles with vanadium dioxide (VO2) is an effective means to realize active plasmonic regulation which has great application potential in optical devices that respond in real-time to external stimuli. However, the high temperature… read more here.
Keywords: sio2 interface; interface layer; gold; vo2 covered ... See more keywords
Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5024608
Abstract: The selectivity of electrically detected magnetic resonance (EDMR) is utilized to probe the dominant recombination defect at the Si-face 4H-SiC/SiO2 interface. The nature of this defect has long been debated with the two main candidates… read more here.
Keywords: sic sio2; detected magnetic; electrically detected; magnetic resonance ... See more keywords
Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors
Sign Up to like & getrecommendations! Published in 2024 at "Journal of Applied Physics"
DOI: 10.1063/5.0203724
Abstract: 4H-SiC/SiO2 interface states play a major role in the performance and reliability of modern 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs). To gain new insights into these interface states, we developed a cryogenic measurement technique that… read more here.
Keywords: sio2 interface; interface states; photon assisted; assisted electron ... See more keywords
Passivation and dissociation of P b-type defects at a-SiO2/Si interface
Sign Up to like & getrecommendations! Published in 2021 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ac0e20
Abstract: It is well known that in the process of thermal oxidation of silicon, there are P b-type defects at amorphous silicon dioxide/silicon (a-SiO2/Si) interface due to strain. These defects have a very important impact on… read more here.
Keywords: sio2 interface; type defects; passivation; passivation dissociation ... See more keywords