Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells
Sign Up to like & getrecommendations! Published in 2020 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2020.110649
Abstract: Abstract The Si–SiO2 interface has and will continue to play a major role in the development of silicon photovoltaic devices. This work presents a detailed examination of how charge at or near this interface influences… read more here.
Keywords: recombination; surface; charge; effect ... See more keywords
Chemical state of phosphorous at the SiC/SiO2 interface
Sign Up to like & getrecommendations! Published in 2019 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2019.02.038
Abstract: Abstract The chemical nature of sub-monolayer phosphorous impurities at the SiC/SiO2 interface is a critical surface science problem related to device performance and other applications. In this study, SiO2 films containing phosphorus were deposited by… read more here.
Keywords: sio2 interface; sic sio2; state phosphorous; phosphorus ... See more keywords
Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5024608
Abstract: The selectivity of electrically detected magnetic resonance (EDMR) is utilized to probe the dominant recombination defect at the Si-face 4H-SiC/SiO2 interface. The nature of this defect has long been debated with the two main candidates… read more here.
Keywords: sic sio2; detected magnetic; electrically detected; magnetic resonance ... See more keywords
Passivation and dissociation of P b-type defects at a-SiO2/Si interface
Sign Up to like & getrecommendations! Published in 2021 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ac0e20
Abstract: It is well known that in the process of thermal oxidation of silicon, there are P b-type defects at amorphous silicon dioxide/silicon (a-SiO2/Si) interface due to strain. These defects have a very important impact on… read more here.
Keywords: sio2 interface; type defects; passivation; passivation dissociation ... See more keywords