Improving interfacial and electrical properties of HfO2/SiO2/p-Si stacks with N2-plasma-treated SiO2 interfacial layer
Sign Up to like & getrecommendations! Published in 2017 at "Rare Metals"
DOI: 10.1007/s12598-017-0958-x
Abstract: The effect of N2-plasma-treated SiO2 interfacial layer on the interfacial and electrical characteristics of HfO2/SiO2/p-Si stacks grown by atomic layer deposition (ALD) was investigated. The microstructure and interfacial chemical bonding configuration of the HfO2/SiO2/Si stacks… read more here.
Keywords: hfo2 sio2; treatment; plasma treatment; sio2 interfacial ... See more keywords