Analysis of the conduction mechanisms responsible for multilevel bipolar resistive switching of SiO2/Si multilayer structures
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DOI: 10.1016/j.spmi.2019.106347
Abstract: Abstract We report on the bipolar resistive switching behavior of a SiO2/Si multilayer (ML) structure measured without current compliance for non-volatile memory applications. The SiO2/Si ML structure was thermally annealed to induce the formation of… read more here.
Keywords: conduction; resistance state; sio2 multilayer; resistive switching ... See more keywords