Thickness dependent growth of Ge nanoparticles in amorphous Ge/SiO2 multilayers
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DOI: 10.1016/j.vacuum.2021.110294
Abstract: Abstract Amorphous Ge/SiO2 multilayers were deposited in a high vacuum by an e-gun assisted physical vapor deposition technique with continuous Ge layers either 2 or 4 nm thick, separated by 2 nm thick SiO2 layers. The aim… read more here.
Keywords: microscopy; growth nanoparticles; sio2 multilayers; thickness dependent ... See more keywords