Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices
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DOI: 10.3390/mi13101641
Abstract: In this work, we investigate the effect of temperature on the electrical characteristics of Al/SiO2/n++-Si RRAM devices. We study the electroforming process and show that forming voltage and time-to-breakdown are well described by Weibull distribution.… read more here.
Keywords: rram devices; sio2 rram; effect; temperature ... See more keywords