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Published in 2021 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ac3ce8
Abstract: The properties of oxide trapped charges and interface state density in the metal oxide semiconductor (MOS) capacitors with an Au/HfO2–SiO2/Si structure were investigated under irradiation of 14 MeV neutron and 60Co gamma-ray. In the mixed…
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Keywords:
mos capacitors;
sio2 structure;
capacitors hfo2;
hfo2 sio2 ... See more keywords