Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors.
Sign Up to like & getrecommendations! Published in 2019 at "Small"
DOI: 10.1002/smll.201905902
Abstract: Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO2 /Si substrate due to… read more here.
Keywords: inse nanowires; inse; sio2 substrates; edge epitaxial ... See more keywords
Photoluminescence properties of CaWO4 and CdWO4 thin films deposited on SiO2/Si substrates
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2019.116619
Abstract: Abstract In this study, we present photoluminescence (PL) analyses under UV and X-ray excitations of thin layers of CaWO4 and CdWO4 deposited on SiO2/Si substrates, by radio-frequency sputtering method. The main objective was to determine… read more here.
Keywords: deposited sio2; microscopy; sio2 substrates; cawo4 cdwo4 ... See more keywords
Vertically oriented ReS2(1-x)Se2x nanosheet-formed porous arrays on SiO2/Si substrates for ultraviolet-visible photoelectric detection.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr03085c
Abstract: Rhenium (Re)-based transition metal dichalcogenides (TMDs) have excellent in-plane anisotropic optical and electrical properties. However, their distorted octahedral (1T') structure and weak interlayer coupling easily lead to anisotropic and out-of-plane growth, which makes it particularly… read more here.
Keywords: nanosheet formed; sio2 substrates; se2x nanosheet; res2 se2x ... See more keywords