High temperature oxidation behaviors of SiON coated AISI 441 in Ar + O2, Ar+H2O, and Ar + CO2 atmospheres
Sign Up to like & getrecommendations! Published in 2020 at "Corrosion Science"
DOI: 10.1016/j.corsci.2020.108429
Abstract: Abstract Silicon oxynitride (SiON) coated AISI 441 was prepared by pyrolysis of a dip-coated perhydropolysilazane (PHPS) precursor polymer. The high temperature oxidation behaviors of SiON coated AISI 441 substrates were studied in Ar + O2, Ar+H2O, and… read more here.
Keywords: coated aisi; temperature oxidation; high temperature; aisi 441 ... See more keywords
Separation of electron and hole trapping components of PBTI in SiON nMOS transistors
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113746
Abstract: Abstract In nMOS transistors the impact of positive bias temperature instability (PBTI) on the device performance is typically considered negligible and has thus been barely studied in the past. However, an accurate description of this… read more here.
Keywords: sion nmos; hole traps; electron hole; sion ... See more keywords
Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.06.003
Abstract: Abstract Bias temperature instability (BTI) is one of the critical device degradation mechanisms in poly-Si/SiON and metal gate/high- k complementary metal-oxide-semiconductor (CMOS) technologies. Using the pre- and post-BTI flicker noise measurements, we investigated the bulk… read more here.
Keywords: bias temperature; noise; sion; mghk mosfets ... See more keywords