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Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105300
Abstract: Abstract SiOx (x = 0.66, 0.76 and 1.04) film anodes with the different oxygen content were prepared by radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) through adjusting SiH4/N2O (R) gas flow ration. The introduction of oxygen can…
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Keywords:
capacity;
film anodes;
siox film;
film ... See more keywords