Study of the properties of SiOx layers prepared by different techniques for rear side passivation in TOPCon solar cells
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DOI: 10.1016/j.mssp.2020.105163
Abstract: Abstract Passivation of n-type and p-type monocrystalline CZ Si wafers (both polished and textured) with silicon oxide layers prepared by thermal (TO), chemical (CO) and plasma (PO) techniques have been extensively investigated from the measurement… read more here.
Keywords: passivation; study; layers prepared; study properties ... See more keywords