Insight into segregation sites for oxygen impurities at grain boundaries in silicon
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/abe80d
Abstract: The three-dimensional distribution of oxygen atoms segregated at Σ9{114} grain boundaries (GBs) in Czochralski-grown silicon ingots is analyzed within a high spatial resolution of less than 0.5 nm by atom probe tomography combined with a… read more here.
Keywords: sites oxygen; insight segregation; grain boundaries; oxygen impurities ... See more keywords