Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect
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DOI: 10.1016/j.jcrysgro.2016.11.058
Abstract: Abstract P-down LEDs (PDLEDs) have the potential to open up new design schemes for III-nitride LEDs compared to conventional n-down LEDs (NDLEDs). For light emitters operating above 480 nm, the PDLED design enables the epitaxial advantages… read more here.
Keywords: iii nitride; memory effect; situ anneal; nitride leds ... See more keywords