Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2019.03.015
Abstract: Abstract In this study, in-situ phosphorus-doped Si 1 − x C x layers were epitaxially grown on blanket and patterned Si wafers using reduced pressure chemical vapor deposition (RPCVD). The effect of post-growth annealing on… read more here.
Keywords: strain microstructures; thermal annealing; strain; situ phosphorus ... See more keywords
Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping
Sign Up to like & getrecommendations! Published in 2018 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.10.013
Abstract: Abstract We report the epitaxy of n-Ge layer with in situ phosphorus (P)-doping using metal-organic chemical vapor deposition (MOCVD) method with tertiary-butyl-germane and tri-ethyl-phosphine precursors. The crystalline and electrical properties of n-Ge epitaxial layers have… read more here.
Keywords: using metal; metal organic; situ; organic chemical ... See more keywords
Defect reduction and dopant activation of in situ phosphorus-doped silicon on a (111) silicon substrate using nanosecond laser annealing
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/abd718
Abstract: In situ phosphorus-doped silicon (ISPD) has been actively investigated as a source/drain material. However, defect formation during the epitaxial growth of ISPD layers in 3D structures deteriorate the device performance. In this study, we investigate… read more here.
Keywords: phosphorus doped; doped silicon; laser annealing; situ phosphorus ... See more keywords