Improved gate reliability of normally off p-GaN gate HEMTs with in situ SiN cap-layer
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0237694
Abstract: The gate reliability of p-GaN gate high electron mobility transistors (HEMTs) was investigated in this Letter. Compared with conventional p-GaN gate HEMT, the in situ SiN cap-layer on the p-GaN layer can lift up the… read more here.
Keywords: sin cap; situ sin; cap layer; reliability ... See more keywords
Analysis of DC, Channel Temperature, and RF Performance of In Situ SiN/AlGaN-Sandwich-Barrier/GaN/Al₀.₀₅GaN HEMTs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3017136
Abstract: In order to further improve the electrical characteristics of AlGaN-buffer devices, we propose a new in situ SiN/AlGaN-sandwich-barrier (SWB)/GaN/Al0.05GaN high-electron mobility transistors (HEMTs). The dc, channel temperature, and RF temperature of the proposed AlGaN-buffer devices… read more here.
Keywords: channel temperature; situ sin; temperature; barrier ... See more keywords