Asymmetry Degradation Behavior Under Forward and Backward Overlap Dynamical Stress in Large-Size Amorphous InGaZnO TFT
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DOI: 10.1109/ted.2024.3435174
Abstract: In this work, the degradation behaviors for large size amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under realistic waveforms in active driving circuit are revealed, and the corresponding degradation mechanisms are analyzed. When the back half… read more here.
Keywords: size amorphous; effect; degradation; large size ... See more keywords