Skin-Compatible Amorphous Oxide Thin-Film-Transistors with a Stress-Released Elastic Architecture
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DOI: 10.3390/app11125501
Abstract: A highly reliable reverse-trapezoid-structured polydimethylsiloxane (PDMS) is demonstrated to achieve mechanically enhanced amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistors (TFTs) for skin-compatible electronics. Finite element analysis (FEA) simulation reveals that the stress within a-IGZO TFTs can be… read more here.
Keywords: stress released; thin film; igzo tfts; skin compatible ... See more keywords