2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
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DOI: 10.1063/1.5012866
Abstract: This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted tri-gate architectures in their anode. The hybrid tri-anode pins the voltage drop… read more here.
Keywords: schottky barrier; tri gate; barrier diodes; slanted tri ... See more keywords