Carrier Generation in p-Type Wide-Gap Oxide: SnNb2O6 Foordite
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DOI: 10.1021/acs.chemmater.8b03408
Abstract: Wide-gap oxides with their valence band maximum (VBM) composed of s orbitals are essential for realizing practical p-type transparent oxide semiconductors. We prepared a new p-type wide-gap oxide, SnNb2O6 foordite, with its VBM composed of… read more here.
Keywords: type wide; wide gap; snnb2o6 foordite; carrier ... See more keywords