SnO/β-Ga2O3 vertical pn heterojunction diodes
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DOI: 10.1063/5.0031442
Abstract: Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $\beta$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\times10^{17}$cm$^{-3}$.… read more here.
Keywords: heterojunction diodes; voltage; vertical heterojunction; sno ga2o3 ... See more keywords