Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis(N-ethoxy-2,2-dimethyl propanamido)tin precursor
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DOI: 10.1016/j.ceramint.2018.09.263
Abstract: Abstract Atomic layer deposition (ALD) of SnO and SnO 2 thin films was successfully demonstrated over a wide temperature range of 70–300 °C using a divalent Sn-precursor, bis( N- ethoxy-2,2-dimethyl propanamido)tin (Sn(edpa) 2 ). The regulated… read more here.
Keywords: sno sno; growth; precursor; sno ... See more keywords