SnSe/MoS2 van der Waals Heterostructure Junction Field-Effect Transistors with Nearly Ideal Subthreshold Slope.
Sign Up to like & getrecommendations! Published in 2019 at "Advanced materials"
DOI: 10.1002/adma.201902962
Abstract: The minimization of the subthreshold swing (SS) in transistors is essential for low-voltage operation and lower power consumption, both critical for mobile devices and internet of things (IoT) devices. The conventional metal-oxide-semiconductor field-effect transistor requires… read more here.
Keywords: snse mos2; nearly ideal; field effect;
Enhanced Electrical and Optoelectronic Characteristics of Few-Layer Type-II SnSe/MoS2 van der Waals Heterojunctions.
Sign Up to like & getrecommendations! Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b15288
Abstract: van der Waals heterojunctions formed by stacking various two-dimensional (2D) materials have a series of attractive physical properties, thus offering an ideal platform for versatile electronic and optoelectronic applications. Here, we report few-layer SnSe/MoS2 van… read more here.
Keywords: snse mos2; waals heterojunctions; van der; der waals ... See more keywords