2D SnSe-based vdW heterojunctions: tuning the Schottky barrier by reducing Fermi level pinning.
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DOI: 10.1039/c8nr02843e
Abstract: Two-dimensional (2D) SnSe is a very promising material for semiconducting devices due to its novel properties. However, the contact behavior between a 2D SnSe sheet and a three-dimensional (3D) metal surface shows an un-tunable Schottky… read more here.
Keywords: level pinning; schottky barrier; fermi level; snse sheet ... See more keywords