Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device
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DOI: 10.3390/nano12132128
Abstract: Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO3(STO) heterojunction-based memory devices with silver (Ag)… read more here.
Keywords: resistive switching; based memristor; snse srtio3; device ... See more keywords