A source/drain-on-insulator structure to improve the performance of stacked nanosheet field-effect transistors
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DOI: 10.1007/s10825-020-01502-9
Abstract: For continued scaling with silicon, the stacked nanosheet field-effect transistor (SNSH-FET) is considered to be a major candidate for sub-7-nm technology. The radiofrequency (RF)/analog performance of a three-channel SNSH-FET is studied herein and benchmarked against… read more here.
Keywords: source drain; source; field effect; snsh fet ... See more keywords