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Published in 2018 at "Applied Sciences"
DOI: 10.3390/app8091553
Abstract: In this paper, we present a gate-all-around silicon nanowire transistor (GAA SNWT) with a triangular cross section by simulation and experiments. Through the TCAD simulation, it was found that with the same nanowire width, the…
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Keywords:
gaa;
cross;
triangular cross;
snwt ... See more keywords