The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops
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DOI: 10.1109/tns.2017.2784763
Abstract: Measured single-event (SE) heavy-ion data for comparable silicon on insulator (SOI) and bulk silicon FinFET D flip-flop (DFF) designs demonstrate a notably greater difference between the SOI and bulk responses, which has commonly been observed.… read more here.
Keywords: charge collection; parasitic capacitance; bulk; soi bulk ... See more keywords