A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications
Sign Up to like & getrecommendations! Published in 2020 at "International Journal of Microwave and Wireless Technologies"
DOI: 10.1017/s1759078720001087
Abstract: Abstract This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) technology and targeting SoC implementation for 5 G applications. Fine-grain wide range… read more here.
Keywords: power; power amplifier; body; soi cmos ... See more keywords
A Broadband, mm-Wave SPST Switch With Minimum 50-dB Isolation in 45-nm SOI-CMOS
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Microwave Theory and Techniques"
DOI: 10.1109/tmtt.2021.3066977
Abstract: This article describes a single-pole, single-throw (SPST) CMOS switch aimed at integrated transceiver applications. The SPST switch realizes better than 50-dB isolation (ISO) across dc-to-43 GHz while maintaining an insertion loss (IL) below 3 dB.… read more here.
Keywords: switch; broadband wave; spst switch; isolation ... See more keywords