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   Articles with "soi finfets" as a keyword



Investigation of total ionizing dose effects on SOI FinFETs at elevated temperatures

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recommendations! Published in 2024 at "Physica Scripta"

DOI: 10.1088/1402-4896/ad954b

Abstract: The synergistic effects of total ionization dose (TID) and high temperature (HT) are investigated for n-type Silicon-on-Insulator (n-SOI) FinFETs. Experimental results reveal that both HT and TID will lead to a negative shift in threshold… read more here.

Keywords: investigation total; dose effects; synergistic effects; ionizing dose ... See more keywords

Confinement Effects on Radiation Response of SOI FinFETs at the Scaling Limit

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recommendations! Published in 2017 at "IEEE Electron Device Letters"

DOI: 10.1109/led.2017.2661239

Abstract: This letter demonstrates the impact of carrier confinement on the radiation response of Si-based SOI finFETS toward the scaling limit. A comparison between the semi-classical and quantum (i.e., self-consistent Schrödinger–Poisson) calculations establishes the significance of… read more here.

Keywords: confinement; scaling limit; radiation response; soi finfets ... See more keywords

Degradation Analysis of 14 nm SOI FinFETs by Influence of Hot Carrier Injection and Self-Heating Synergistic Effects

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recommendations! Published in 2025 at "IEEE Transactions on Device and Materials Reliability"

DOI: 10.1109/tdmr.2025.3590371

Abstract: With device dimensions shrink, traditional plane-field effect transistors no longer meet the demands of the development. As a novel type of three-dimensional device, 14 nm SOI FinFETs has been widely research attention and application due… read more here.

Keywords: self heating; hot carrier; device; carrier injection ... See more keywords

Back-Biasing to Performance and Reliability Evaluation of UTBB FDSOI, Bulk FinFETs, and SOI FinFETs

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recommendations! Published in 2018 at "IEEE Transactions on Nanotechnology"

DOI: 10.1109/tnano.2017.2706265

Abstract: FinFETs and ultrathin body and buried oxide fully depleted silicon on insulator (UTBB-FDSOI) are the main transistors currently used in advanced integrated circuits (ICs). The tunable electrical properties via back-biasing facilitate the threshold voltage adjustment… read more here.

Keywords: soi finfets; bulk finfets; utbb fdsoi; back biasing ... See more keywords