Confinement Effects on Radiation Response of SOI FinFETs at the Scaling Limit
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2661239
Abstract: This letter demonstrates the impact of carrier confinement on the radiation response of Si-based SOI finFETS toward the scaling limit. A comparison between the semi-classical and quantum (i.e., self-consistent Schrödinger–Poisson) calculations establishes the significance of… read more here.
Keywords: confinement; scaling limit; radiation response; soi finfets ... See more keywords
Back-Biasing to Performance and Reliability Evaluation of UTBB FDSOI, Bulk FinFETs, and SOI FinFETs
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2017.2706265
Abstract: FinFETs and ultrathin body and buried oxide fully depleted silicon on insulator (UTBB-FDSOI) are the main transistors currently used in advanced integrated circuits (ICs). The tunable electrical properties via back-biasing facilitate the threshold voltage adjustment… read more here.
Keywords: soi finfets; bulk finfets; utbb fdsoi; back biasing ... See more keywords