An Optimized Ge Pocket SOI JLT with Efforts to Improve the Self-Heating Effect: Doping & Materials Perspective
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DOI: 10.1007/s12633-019-00319-x
Abstract: An approach is demonstrated to improve the performance of conventional SOI JLT (Silicon-on-Insulator Junctionless Transistor) i.e., to increase the on-off ratio with an effort to improve the self-heating effect. A small germanium pocket is introduced… read more here.
Keywords: jlt; soi jlt; pocket; heating effect ... See more keywords