Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
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DOI: 10.1016/j.sse.2020.107952
Abstract: Abstract In this paper, the experimental investigation on the electrical properties of silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT) after total-ionizing-dose (TID) irradiation is presented. We find that the TID irradiation reduces the threshold voltage (Vth),… read more here.
Keywords: irradiation; experimental investigation; soi ligbt; total ionizing ... See more keywords
Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench
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DOI: 10.1088/1674-1056/ac29ac
Abstract: A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to… read more here.
Keywords: cdbl; compound dielectric; dielectric buried; ligbt ... See more keywords