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Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00453-x
Abstract: This paper presents an efficient method to improve the heating effects in Nanoscale SOI MOSFET with the Vertical Gaussian Doping Profile in Drain and Source regions (D-S-G-SOI). Three different structures are investigated: uniform drain (C-SOI),…
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Keywords:
soi mosfet;
drain;
soi;
drain source ... See more keywords
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Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.04.007
Abstract: Abstract Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase…
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Keywords:
soi mosfet;
region;
soi;
device ... See more keywords
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Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2666262
Abstract: In this paper, thermal stability and phonon transport of 22-nm fully depleted silicon on insulator (FD-SOI) MOSFET is investigated. On the one hand, we havedemonstrated that the single-phase-lag(SPL) model is able to predict the phonon…
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Keywords:
soi mosfet;
model;
electrothermal model;
nonlinear electrothermal ... See more keywords
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Published in 2018 at "Advances in Electrical and Electronic Engineering"
DOI: 10.15598/aeee.v16i3.2797
Abstract: Recently, Fully-Depleted Silicon on Insulator (FD-SOI) MOSFETs have been accepted as a favourable technology beyond nanometer nodes, and the technique of Recessed-Source/Drain (Re-S/D) has made it more immune in regards of various performance factors. However,…
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Keywords:
soi mosfet;
buried oxide;
box;
tmg ... See more keywords