Temperature-Dependent Thermal Capacitance Characterization for SOI-MOSFETs
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DOI: 10.1109/ted.2019.2935500
Abstract: Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on-insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through… read more here.
Keywords: temperature dependent; dependent thermal; thermal capacitance; soi mosfets ... See more keywords
Subthreshold Characteristic Analysis and Models for Tri-Gate SOI MOSFETs Using Substrate Bias Induced Effects
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2019.2906567
Abstract: This paper proposes the substrate bias voltage dependent subthreshold models of channel potential, threshold voltage, current, drain induced barrier lowering, and subthreshold swing for tri-gate silicon-on-insulator (SOI) MOSFETs (TG-MOSFETs). The substrate induced surface potential effect… read more here.
Keywords: soi mosfets; subthreshold characteristic; tri gate; substrate bias ... See more keywords