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Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4994318
Abstract: We report direct growth of 1550-nm InGaAsP multi-quantum-well (MQW) structures in densely packed, smooth, highly crystalline, and millimeter-long InP nanoridges grown by metalorganic chemical vapor deposition on silicon-on-insulator (SOI) substrates. Aspect-ratio-trapping and selective area growth…
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Keywords:
ingaasp multi;
microscopy;
multi quantum;
soi substrates ... See more keywords
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Published in 2017 at "Chinese Physics Letters"
DOI: 10.1088/0256-307x/34/6/068101
Abstract: High-resistivity silicon-on-insulator (HR-SOI) and trap-rich high-resistivity silicon-on-insulator (TR-SOI) substrates have been widely adopted for high-performance rf integrated circuits. Radio-frequency loss and non-linearity characteristics are measured from coplanar waveguide (CPW) transmission lines fabricated on HR-SOI and…
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Keywords:
soi substrates;
radio frequency;
soi soi;
soi ... See more keywords
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Published in 2021 at "Nanotechnology"
DOI: 10.1088/1361-6528/abe3b6
Abstract: Scalable fabrication of Si nanowires with a critical dimension of about 100 nm is essential to a variety of applications. Current techniques used to reach these dimensions often involve e-beam lithography or deep-UV (DUV) lithography…
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Keywords:
soi substrates;
fabrication;
duv lithography;
lithography ... See more keywords
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Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2805780
Abstract: This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation, and nonlinear behavior. It is fabricated on three different types of high…
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Keywords:
trap rich;
soi substrates;
small large;
signal characteristics ... See more keywords