High nitrogen composition–induced low interfacial roughness of GaAs0.978N0.022/GaAs multiple quantum wells grown through solid-source molecular beam epitaxy
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DOI: 10.1016/j.materresbull.2016.12.032
Abstract: Abstract GaAs 1−x N x /GaAs multiple quantum wells (MQWs) were grown on GaAs(001) substrates through solid-source molecular beam epitaxy under various nitrogen background pressures (NBPs), and the crystal quality at the interface of GaAs… read more here.
Keywords: nitrogen; multiple quantum; gaas; gaas multiple ... See more keywords
Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy
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DOI: 10.1088/1361-6641/aa8a87
Abstract: A strained Si/relaxed SiGe heterostructure grown on Si(110) substrate is attractive as a platform for high-hole-mobility Si-based electronic devices. To improve the electrical property, a smoother surface is desirable. In this study, we investigated surface… read more here.
Keywords: strained relaxed; relaxed sige; source molecular; solid source ... See more keywords
Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition
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DOI: 10.1186/s11671-018-2685-0
Abstract: The morphologies and microstructures of Au-catalyzed InGaAs nanowires (NWs) prepared by a two-step solid-source chemical vapor deposition (CVD) method were systematically investigated using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The detailed… read more here.
Keywords: ingaas nanowires; chemical vapor; microscopy; two step ... See more keywords