Fully solution-induced high performance indium oxide thin film transistors with ZrO: x high-k gate dielectrics
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DOI: 10.1039/c8ra02108b
Abstract: Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors.… read more here.
Keywords: gate dielectrics; induced high; performance; fully solution ... See more keywords