Magnetic memory driven by topological insulators
Sign Up to like & getrecommendations! Published in 2021 at "Nature Communications"
DOI: 10.1038/s41467-021-26478-3
Abstract: Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel… read more here.
Keywords: magnetic memory; memory driven; topological insulators; memory ... See more keywords
Reconfigurable and Dynamically Transformable In-Cache-MPUF System With True Randomness Based on the SOT-MRAM
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2022.3168133
Abstract: In this paper, we present a reconfigurable Physically Unclonable Functions (PUF) based on the Spin-Orbit-Torque Magnetic Random-Access Memory (SOT-MRAM), which exploits thermal noise as the true dynamic entropy source. Therefore, the MRAM cells could be… read more here.
Keywords: randomness; mram; cache mpuf; sot mram ... See more keywords
Area Efficient Shared Diode Multi-Level Cell SOT-MRAM
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Magnetics"
DOI: 10.1109/tmag.2018.2848114
Abstract: This paper proposes a diode-based multi-level cell spin–orbit torque magnetic random-access memory (SOT-MRAM) for high density memory applications. By stacking a shared diode over two in-parallel magnetic tunnel junctions (MTJs) that share a common heavy… read more here.
Keywords: level cell; multi level; area; cell ... See more keywords