A Theoretical Study on the Influence of Carrier Generation on Drain-Source Current of Graphene Nanoscroll Transistors
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DOI: 10.1007/s11468-019-00920-1
Abstract: A novel approach is presented in order to study the effects of carrier generation on the drain-source current of graphene nanoscroll field effect transistors (GNSFET). In this method, ionisation carrier concentration is calculated and included… read more here.
Keywords: graphene; carrier; source current; drain source ... See more keywords