A source/drain-on-insulator structure to improve the performance of stacked nanosheet field-effect transistors
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-020-01502-9
Abstract: For continued scaling with silicon, the stacked nanosheet field-effect transistor (SNSH-FET) is considered to be a major candidate for sub-7-nm technology. The radiofrequency (RF)/analog performance of a three-channel SNSH-FET is studied herein and benchmarked against… read more here.
Keywords: source drain; source; field effect; snsh fet ... See more keywords
Work Function Tuning and Doping Optimization of 22-nm HKMG Raised SiGe/SiC Source–Drain FinFETs
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-016-5199-5
Abstract: The basic requirements on process design of extremely scaled devices involve appropriate work function and tight doping control due to their significant effect on the threshold voltage as well as other critical electrical parameters such… read more here.
Keywords: work function; function; source drain; metal gate ... See more keywords
Effects of source/drain elevation and side spacer dielectric on drivability performance of non-abrupt ultra shallow junction gate underlap GAA MOSFETs
Sign Up to like & getrecommendations! Published in 2018 at "Indian Journal of Physics"
DOI: 10.1007/s12648-017-1091-2
Abstract: Present work focuses on quantitative effects of source/drain elevation height ($${\text{h}}_{\text{SD}}$$hSD) and side spacer dielectric material (Air, SiO2, Si3N4 and HfO2) on the current drive of non-abrupt ultra shallow junction (USJ) gate all around (GAA)… read more here.
Keywords: text text; drain elevation; side spacer; source drain ... See more keywords
Source-drain Resistance Characteristics of Back-channel Etched Amorphous InGaZnO Thin Film Transistors with TiO 2 :Nb Protective Layer
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.04.020
Abstract: Abstract This work investigates the source-drain (S-D) parasitic resistance (RSD) characteristics of the back-channel-etched (BCE) a-IGZO TFTs with ultra-thin Nb doped TiO2 (TNO) protective layer. It is shown that RSD is strongly related to the… read more here.
Keywords: tno; layer; source drain; characteristics back ... See more keywords
Effects of high in-situ source/drain boron doping in p-FinFETs on physical and device performance characteristics
Sign Up to like & getrecommendations! Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.03.007
Abstract: Abstract In this study, the effects of high in-situ boron (B) doping in embedded source/drain (S/D) silicon germanium (SiGe) stressor of p-channel Fin Field Effect Transistors (FinFETs) in a 14 nm technology node were investigated. The… read more here.
Keywords: effects high; high situ; boron doping; spectroscopy ... See more keywords
Bottom-contact organic thin film transistors with transparent Ga-doped ZnO source-drain electrodes
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.05.023
Abstract: Abstract In this study, transparent Ga-doped ZnO (GZO) films grown by magnetron sputtering were used as the source-drain (S-D) electrodes of bottom-contact organic field effect transistors (OTFTs). The GZO films exhibited good transmittance (beyond 80… read more here.
Keywords: bottom contact; gzo films; transparent doped; drain electrodes ... See more keywords
Investigation of the source-drain electrodes/the active layer contact-effect on the performance of organic phototransistor
Sign Up to like & getrecommendations! Published in 2017 at "Synthetic Metals"
DOI: 10.1016/j.synthmet.2017.09.006
Abstract: Abstract In order to clarify the influence of the source/drain (S/D) electrodes/the active layer contact condition on the photoelectric properties of the organic phototransistor (OPT), pentacene (Pn) and copper phthalocyanine (CuPc) based OPTs with Au… read more here.
Keywords: electrodes active; source drain; drain electrodes; active layer ... See more keywords
Enhanced Organic Thin-Film Transistor Stability by Preventing MoO3 Diffusion with Metal/MoO3/Organic Multilayered Interface Source-Drain Contact.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c18780
Abstract: The source-drain electrode with a MoO3 interfacial modification layer (IML) is considered the most promising method to solve electrical contact issues impeding organic thin-film transistors (OTFTs) from commercialization. However, this method raises many concerns because… read more here.
Keywords: contact; diffusion; source drain; moo3 diffusion ... See more keywords
Unraveling the Issue of Ag Migration in Printable Source/Drain Electrodes Compatible with Versatile Solution-Processed Oxide Semiconductors for Printed Thin-Film Transistor Applications.
Sign Up to like & getrecommendations! Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b00524
Abstract: In recent decades, solution-processable, printable oxide thin-film transistors have garnered a tremendous amount of attention given their potential for use in low-cost, large-area electronics. However, printable metallic source/drain electrodes undergo undesirable electrical/thermal migration at an… read more here.
Keywords: thin film; drain electrodes; migration; solution ... See more keywords
Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0204316
Abstract: Source–drain contacts seriously affect low frequency noise (LFN) in amorphous IZO (a-IZO) thin-film transistors with bilayer ITO/Mo electrodes at cryogenic temperatures. In the range of 7–300 K, electrical and LFN performances of devices are measured, and… read more here.
Keywords: source drain; frequency noise; thin film; contact ... See more keywords
Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm
Sign Up to like & getrecommendations! Published in 2025 at "APL Materials"
DOI: 10.1063/5.0249739
Abstract: This study presents a comprehensive analysis of the structural and electrical properties of degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors (HEMTs) fabricated using low-temperature pulsed sputtering epitaxial growth. The investigation encompassed a range of… read more here.
Keywords: source drain; alxga1 aln; gan source; drain ... See more keywords