Speciation of nitrite, nitrate and p-nitrophenol by photochemical vapor generation of NO using High-Resolution Continuum Source Molecular Absorption Spectrometry
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Food Composition and Analysis"
DOI: 10.1016/j.jfca.2018.04.003
Abstract: Abstract This paper presents a new speciation method of n-compounds in food samples using the technique of High-Resolution Continuum Source Molecular Absorption Spectrometry (HR-CS MAS). The nitrite ion was determined in a quartz cell of… read more here.
Keywords: high resolution; source molecular; molecular absorption; resolution continuum ... See more keywords
Synthesis of photoresponsive and photoemissive ultrathin 2D nanosheets of In2S3 achieved through a new single source molecular precursor
Sign Up to like & getrecommendations! Published in 2022 at "RSC Advances"
DOI: 10.1039/d2ra05000e
Abstract: Indium sulfide, a two-dimensional semiconductor material, has emerged as a promising candidate for cost-effective and sustainable solar cells. This report deals with the facile preparation of colloidal In2S3 with a new ultrathin nanosheet (NS) morphology.… read more here.
Keywords: synthesis photoresponsive; molecular precursor; source molecular; single source ... See more keywords
Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy
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DOI: 10.1063/1.4989884
Abstract: We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on… read more here.
Keywords: gas source; compensation; grown gas; source molecular ... See more keywords
Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa8a87
Abstract: A strained Si/relaxed SiGe heterostructure grown on Si(110) substrate is attractive as a platform for high-hole-mobility Si-based electronic devices. To improve the electrical property, a smoother surface is desirable. In this study, we investigated surface… read more here.
Keywords: strained relaxed; relaxed sige; source molecular; solid source ... See more keywords