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Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00601-3
Abstract: This article proposes a novel dual-material double-source T-shaped tunnel field-effect transistor (TFET) to suppress the ambipolar current conduction. The use of two sources in the proposed device doubles the tunneling junction area between the source…
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Keywords:
source;
source shaped;
material double;
dual material ... See more keywords