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Spacer Engineering in Negative Capacitance FinFETs

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Published in 2019 at "IEEE Electron Device Letters"

DOI: 10.1109/led.2019.2911104

Abstract: The spacer design of the negative-capacitance FinFET (NC-FinFET) is investigated by using Sentaurus technology computer-aided design (TCAD). The spacer affects not only the gate capacitance but also the drain current due to the additional gate… read more here.

Keywords: spacer engineering; finfet; negative capacitance; spacer ... See more keywords