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   Articles with "specific contact" as a keyword



Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer

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recommendations! Published in 2024 at "Scientific Reports"

DOI: 10.1038/s41598-024-61837-2

Abstract: Oxide semiconductors have gained significant attention in electronic device industry due to their high potential for emerging thin-film transistor (TFT) applications. However, electrical contact properties such as specific contact resistivity (ρC) and width-normalized contact resistance… read more here.

Keywords: contact resistivity; tin igto; specific contact; thin film ... See more keywords
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A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp2-carbon

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recommendations! Published in 2020 at "Applied Physics Letters"

DOI: 10.1063/5.0009813

Abstract: Generally, high temperature annealing treatment (>950 °C) is required to form Ni/SiC Ohmic contact. Some research believes that the specific contact resistance could be improved by the increase in sp2-carbon at the Ni/SiC interface. In this… read more here.

Keywords: contact resistance; carbon; sp2 carbon; ohmic contact ... See more keywords

Low specific contact resistance between InAs/Ni–InAs evaluated by multi-sidewall TLM

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recommendations! Published in 2023 at "AIP Advances"

DOI: 10.1063/5.0150296

Abstract: The specific contact resistance ρint of the InAs/Ni–InAs interface was evaluated by the multi-sidewall transmission line method (MSTLM), where Ni–InAs was formed by alloying Ni and InAs-on-insulator substrates. The revised test structure for MSTLM has… read more here.

Keywords: inas inas; contact resistance; inas; specific contact ... See more keywords

Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80% for far-UVC LEDs

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recommendations! Published in 2025 at "Journal of Semiconductors"

DOI: 10.1088/1674-4926/25010026

Abstract: AlGaN-based LEDs with peak wavelength below 240 nm (far-UVC) pose no significant harm to human health, thus highlighting their broader application potential. While, there is a significant Schottky barrier between the n-electrode and Al-rich n-AlGaN,… read more here.

Keywords: contact resistivity; specific contact; far uvc; contact ... See more keywords

Origin of High Specific Contact Resistivity in TiN-InGaZnO Junctions

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recommendations! Published in 2024 at "IEEE Electron Device Letters"

DOI: 10.1109/led.2024.3424407

Abstract: Herein, applying a multiscale approach that combines technology computer-aided design (TCAD) simulations and ab initio calculations, we investigate the electronic and transport properties of the titanium nitride (TiN) - indium-gallium-zinc oxide (IGZO) Schottky contact. We… read more here.

Keywords: contact resistivity; schottky; specific contact; origin high ... See more keywords