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Published in 2017 at "Semiconductors"
DOI: 10.1134/s1063782617110239
Abstract: The capabilities of a technique based on combined photoluminescence and Raman-spectroscopy measurements upon lateral scanning across the cleaved edge of heterostructures for monitoring the strain profile and the thickness of epitaxial layers are demonstrated. The…
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Keywords:
cleaved edge;
photoluminescence spectroscopy;
spectroscopy multilayer;
spectroscopy ... See more keywords