Numerical Investigation of Coupled Effects of Rotational Speed Difference and Growth Rate on VOx Defect Behavior in Czochralski Silicon
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DOI: 10.1002/crat.70040
Abstract: This study employs numerical simulation to analyze the coupled effects of rotation speed difference (Δω) and growth rate (Vg) on thermal stress and oxygen‐related defect behavior during Czochralski silicon single crystal growth. The results indicate… read more here.
Keywords: growth rate; difference growth; speed difference; coupled effects ... See more keywords