True Nonvolatile High‐Speed DRAM Cells Using Tailored Ultrathin IGZO
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Materials"
DOI: 10.1002/adma.202210554
Abstract: Severe power consumption in the continuous scaling of Silicon‐based dynamic random access memory (DRAM) technology quests for a transistor technology with a much lower off‐state leakage current. Wide bandgap amorphous oxide semiconductors, especially indium‐gallium‐zinc‐oxide (IGZO)… read more here.
Keywords: high speed; speed dram; true nonvolatile; dram ... See more keywords