High Switching Speed and Stability ECM STO Resistive Memory on n+-Si Substrate Realized Using Cu Filament Mechanism
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DOI: 10.1109/ted.2025.3599500
Abstract: Simplified structure and superior electrical properties are critical for addressing the challenges of size scaling and efficiency improvement of 3-D stacked memory technologies. This brief demonstrates a high-performance and high switching speed bipolar resistive random… read more here.
Keywords: memory; high switching; speed stability; mechanism ... See more keywords