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Published in 2018 at "COMPEL - The international journal for computation and mathematics in electrical and electronic engineering"
DOI: 10.1108/compel-04-2017-0163
Abstract: Purpose This paper aims to present a SPICE model to represent antennas in receiving mode. The model can be used to evaluate the performance of the antenna when it is coupled to several different nonlinear…
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Keywords:
methodology;
spice model;
circuit;
model ... See more keywords
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Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.3034321
Abstract: In this article, accurate physical and SPCIE model of wafer-level monolayer molybdenum disulfide (MoS2) device are developed to guide the devices and circuits design, which is the foundation of high-performance analog chip design. Moreover, the…
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Keywords:
analog integrated;
spice model;
mos2;
model ... See more keywords
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Published in 2025 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2025.3614492
Abstract: We present a physics-based static DC SPICE model for 2D-material-based reconfigurable FETs (RFETs) using our in-house core, which integrates Fermi–Dirac (FD) statistics with 2D density of states (DOS) and models transport via thermionic (TE), field…
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Keywords:
physics based;
analyzing variability;
model;
spice model ... See more keywords
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Published in 2024 at "IEEE Photonics Technology Letters"
DOI: 10.1109/lpt.2024.3493956
Abstract: We present an 850-nm VCSEL SPICE model that can be easily used for VCSEL simulation together with driver circuits. Our model consists of piece-wise linear RLC elements, whose bias-dependent parameter values are determined from measurement,…
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Keywords:
piece wise;
vcsel;
wise linear;
model ... See more keywords
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Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2875661
Abstract: In this paper, we describe an improved SPICE model for the negative capacitance field-effect transistor (NCFET). According to the law of conservation of charge, the model is built based on the relationship between the gate…
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Keywords:
negative resistance;
spice model;
dibl effect;
effect ... See more keywords
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Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3487959
Abstract: Dispersive effects such as trapping play a vital role in determining the performance of AlGaN/gallium nitride (GaN) high-electron mobility transistors (HEMTs) for RF and power applications—necessitating accurate modeling for robust circuit designs. This work presents…
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Keywords:
lag;
algan gan;
model;
accurate ... See more keywords
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Published in 2025 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2025.3591092
Abstract: In recent years, electrolyte synaptic transistors have become a popular choice for neuromorphic computing hardware due to their low power consumption, high linearity, and dynamic conductance modulation capabilities. However, the lack of precise circuit models…
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Keywords:
electrolyte synaptic;
model electrolyte;
synaptic transistors;
model ... See more keywords
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Published in 2019 at "International Journal of GEOMATE"
DOI: 10.21660/2019.55.4510
Abstract: A SPICE model of Drain Induced Barrier Lowering (DIBL) has been proposed for a symmetric junctionless double gate (JLDG) MOSFET. For this purpose, the potential distribution in the channel is obtained using the Poisson equation,…
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Keywords:
double gate;
spice model;
model drain;
model ... See more keywords
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Published in 2022 at "Micromachines"
DOI: 10.3390/mi13101630
Abstract: This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p+-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model. Such separations are conducted by…
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Keywords:
long term;
compact spice;
spice model;
model ... See more keywords